SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Vo...
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION.
FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Ta=25 ) Collector Power Dissipation
(Tc=25 ) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO VEBO IC IB
PC
PC
Tj Tstg
RATING -160 -150 -5 -600 -100
625
1.5
150 -55 150
UNIT V V V mA mA
mW
W
L M
C
2N5401
EPITAXIAL PLANAR
PNP TRANSISTOR
BC
JA
KE G
D
H
FF
1 23
N DIM MILLIMETERS A 4.70 MAX B 4.80 MAX C 3.70 MAX D 0.45 E 1.00 F 1.27 G 0.85 H 0.45 J 14.00 +_0.50 K 0.55 MAX L 2.30 M 0.45 MAX N 1.00
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
1997. 5. 13
Revision No : 0
1/2
2N5401
ELECTRICAL CHARACTERISTICS (Ta=25 ...
