2N4238

Bipolar Transistor Description: A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits. Collector 3 2 Base 1 Emitter Maximum Ratings: Characteristic Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TA = +25°C) Total Device Dissipation(TC = +25°C) Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case Symbol VCBO VCEO IC IB Ptot TJ Tstg RthJC Rating 80 60 6 1 500 1 6 +200 -65 to +200 29 Unit V A mA W °C °C/W www.element14.com www.farnell.com www.newark.com Page <1> 23/04/13 V1.0 Bipolar Transistor Electrical Characteristics: (TA = +25°C Unless otherwise specified) Parameter Symbol Test Conditions Collector Cutoff Current Emitter Cutoff Voltage Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage Base...