Medium Power Transistor
Description:
Medium Power Plastic PNP, TO-126, Silicon Transistor. Designed for driver circuits...
Medium Power
Transistor
Description:
Medium Power Plastic
PNP, TO-126, Silicon
Transistor. Designed for driver circuits, switching, and amplifier applications.
Features:
Low Saturation Voltage: VCE(sat) 0.6V DC IC = 1A Excellent Power Dissipation Due to Thermopad Construction
PD = 30 @ TC = 25°C
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation at Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO IC IB
PD
Rating 80 80 5 1 1 30 0.24
Unit
V
A W mW/°C
Tj, Tstg -65 to +150
°C
PNP
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter OFF Characteristics Collector - Emitter Breakdown Voltage (Note 1)
Collector Cut-Off Current
Emitter Cut-Off Current ON Characteristics (Note 1)
Symbol
V(BR)CEO ICEX ICEO ICBO IEBO
Test Conditions
IC=100mA, IB=0 VCE=80V, VEB(off)=1.5V
VCB...
