Document
Bipolar Transistor
Collector 3
2 Base
1 Emitter
Description:
A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as drivers for high power transistors in general purpose amplifier and switching circuits.
Maximum Ratings:
Characteristic Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TC = +25°C) Total Device Dissipation(TA = +25°C) Operating Junction Temperature Storage Temperature Range Thermal Resistance, Junction-to-Case
Symbol VCEO IE
IC
IB
Ptot
TJ Tstg RthJC
Rating
80
7 1 200 6 1
-65 to +200
29
Unit
V
A mA W
°C °C/W
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23/04/13 V1.0
Bipolar Transistor
Electrical Characteristics: (TA = +25°C Unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Voltage Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage
Base-Emitter On Vol.