2N3792

TECHNICAL DATA PNP HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/379 Devices 2N3791 2N3792 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +1000C (2) Operating & Storage Junction Temperature Range THERMAL CHARACTERISTICS VCEO VCBO VEBO IB IC PT TJ, Tstg Characteristics Symbol Thermal Resistance, Junction-to-Case RθJC 1) Derate linearly @ 28.57 mW/0C for TA > +250C 2) Derate linearly @ 0.857 mW/0C for TC > +1000C 2N3791 2N3792 60 80 60 80 7.0 4.0 10 5.0 85.7 -65 to +200 Max. 1.17 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc 2N3791 2N3792 V(BR)CEO Collector-Emitter Cutoff Current VCE = 50 Vdc 2N3791 ICES VCE = 70 Vdc Collector-Emitter Cutoff Current 2N3792 VCE = 60 Vdc...