2N3789 2N3791 2N3790 2N3792
SILICON PNP POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL...
2N3789 2N3791 2N3790 2N3792
SILICON
PNP POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3789, 2N3790, 2N3791, and 2N3792 are silicon
PNP power
transistors, manufactured by the epitaxial planar process, designed for medium speed switching and amplifier applications.
MARKING: FULL PART NUMBER
TO-3 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC
2N3789 2N3791
60
2N3790 2N3792
80
60 80
7.0
10
4.0
150
-65 to +200
1.17
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) 2N3789
2N3791
SYMBOL TEST CONDITIONS
MIN MAX
ICEV
VCE=Rated VCEO, VEB=1.5V
- 1.0
ICEV
VCE=Rated VCEO, VEB=1.5V, TC=150°C
- 5.0
IEBO
VEB=7.0V
- 5.0
BVCEO IC=200mA
60 -
VCE(SAT) IC=4.0A, IB=400mA (2N3789, 2N3790...
