2N3902

TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/371 Devices 2N3902 2N5157 Qualified Level JAN JANTX MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.8 W/0C for TC > +750C Symbol VCEO VEBO VCBO IB IC PT Tj, Tstg Symbol RθJC ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc 2N3902 VCE = 400 Vdc Collector-Emitter Cutoff Current 2N5157 VBE = 1.5 Vdc; VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 2N3902 VEB = 6.0 Vdc ON CHARACTERISTICS(3) 2N5157 Base-Emitter Saturation Voltage IC = 1.0 Adc; IB = 0.1 Adc IC = 3.5 Adc; IB = 0.7 Adc Collector-Emitter Satura...