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D44H11TU Dataheets PDF



Part Number D44H11TU
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Datasheet D44H11TU DatasheetD44H11TU Datasheet (PDF)

D44H11TU — NPN Epitaxial Silicon Transistor D44H11TU NPN Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H March 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO VEBO IC ICP PC TJ TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector .

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D44H11TU — NPN Epitaxial Silicon Transistor D44H11TU NPN Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H March 2009 1 TO-220 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCEO VEBO IC ICP PC TJ TSTG Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 80 5 10 20 50 1.67 150 - 55 ~ 150 Units V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition Min. Typ. BVCEO BVEBO ICES IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 Emitter-Base Breakdown Voltage IE = 500μA, IC= 0 Collector Cut-off Current VCE = Rated VCEO, VEB = 0 Emitter Cut-off Current V.


D44H11 D44H11TU BD441


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