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D44H11TU — NPN Epitaxial Silicon Transistor
D44H11TU
NPN Epitaxial Silicon Transistor
• Low Collector-Emitter Saturation Voltage : VCE(sat) = 1V (Max.) @ 8A • Fast Switching Speeds • Complement to KSE45H
March 2009
1 TO-220 1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCEO VEBO IC ICP PC
TJ TSTG
Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector-Current (Pulse) Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature
Value
80 5 10 20 50 1.67 150 - 55 ~ 150
Units
V V A A W W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ.
BVCEO BVEBO ICES IEBO hFE VCE(sat) VBE(sat) fT Cob tON tSTG tF
Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0
Emitter-Base Breakdown Voltage
IE = 500μA, IC= 0
Collector Cut-off Current
VCE = Rated VCEO, VEB = 0
Emitter Cut-off Current
V.