Bipolar Transistor
Description:
This TO-126 plastic silicon epitaxial base NPN power transistor intended for use in pow...
Bipolar
Transistor
Description:
This TO-126 plastic silicon epitaxial base
NPN power
transistor intended for use in power linear and switching applications.
Collector 3
2 Base
1 Emitter
Absolute Maximum Ratings
Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Continuous Collector Current Total Device Dissipation at Tc = 25°C Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO IC PD
Tj, Tstg
Rating 80 80 5 4 36
-65 to +150
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector - Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current ON Characteristics
V(BR)CEO ICBO ICES IEBO
IC=100mA, IB=0 VCB=80V, IB=0 VCE=80V, VBE=0 VEB=5V, IC=0
DC Current Gain
Collector - Emitter Saturation Voltage Base - Emitter On Voltage Small-Signal Characteristics
hFE
VCE(sat) VBE(on)
VCE=5V, IC=10mA VCE=1V, IC=500mA
VCE=1V, IC=2A IC=2A, IB=0.2A IC=2A,...