BCW60

BCW60 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IBM Ptot TJ TS Value 32 32 5 100 200 200 200 150 -65 to +150 Unit V V V mA mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005 BCW60 Characteristics at Ta =25 OC Parameter Symbol DC Current Gain at VCE = 5 V, IC = 10 µA at VCE = 5 V, IC = 2 mA at VCE = 1 V, IC = 50 mA BCW60B BCW60C BCW60D BCW6...