SILICON EPITAXIAL NPN TRANSISTOR
2N4912
• Low Saturation Voltage Transistor In A Hermetic Metal Package
• Designed For ...
SILICON EPITAXIAL
NPN TRANSISTOR
2N4912
Low Saturation Voltage
Transistor In A Hermetic Metal Package
Designed For Driver Circuits, Switching and Amplifier Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector - Base Voltage
80V
VCEO Collector - Emitter Voltage
80V
VEBO Emitter – Base Voltage
5V
IC Continuous Collector Current
1.0A
IB Base Current
1.0A
PD Total Power Dissipation at Tc = 25°C
25W
Derate Above 25°C
0.143W/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg
Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Min. Typ. Max. Units 7 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibi...