Document
MPSA63 / 64
PNP Silicon Epitaxial Planar Transistor
Darlington Transistor for high gain amplification
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current at -VCB = 30 V Emitter Cutoff Current at -VEB = 10 V Collector Emitter Breakdown Voltage at -IC = 100 µA Collector Emitter Saturation Voltage at -IC = 100 mA, -IB = 100 µA Base Emitter On Voltage at -VCE = 5 V, -IC = 100 mA Transition Frequency at -VCE = 5 V, IE = 10 mA
1. Emitter 2. Base 3. Collector TO-92 Plastic Package Weight approx. 0.19g
Symbol
-VCBO -VCES -VEBO
-IC Ptot Tj TS
Value 30 30 10 500 625 150
- 55 to + 150
Unit V V V mA
mW OC OC
MPSA63 MPSA64 MPSA63 MPSA64
Symbol
hFE hFE hFE hFE -ICBO
-IEBO
-V(BR)CES
-VCE(sat)
VBE(on)
fT
M.