1N6331 Diodes Datasheet

1N6331 Datasheet, PDF, Equivalent


Part Number

1N6331

Description

Small Signal Zener Diodes

Manufacture

ES Components

Total Page 2 Pages
Datasheet
Download 1N6331 Datasheet


1N6331
ES Components
1N6309 – 1N6345 Family
Bare Die
DATA SHEET
Small Signal Zener Diodes
Wire Bondable, Epoxy Attach Bare Die
Rev: B
FEATURES
Wafer fab by Vishay Semiconductor
Silicon planar Zener diode
MECHANICAL DATA
Top Metal
( Anode )
Back Metal
( Cathode )
Passivation
AlSi
AuSb
Nitride
THERMAL CHARACTERISTICS
Parameter:
Junction Temperature (max)
Operating Temperature Range
Storage Temperature Range
Symbol:
TJ
TOP
TS
Value:
+175
-55 to +175
-55 to +175
Unit
°C
°C
°C
DEVICE CODE
1N6310
Base Part Number
1N6309 – 1N6345
C
Tolerance (%VZ)
“No suffix” = 5%
“C” = 2%
E
Bottom Side Attach Method
Epoxy Die Attach
B
Top Side Connection Method
Wire Bondable
D
Form
D = Die
108 Pratts Junction Road / Sterling, MA 01564 / P) 978.422.7641 / F) 978.422.0011
www.escomponents.com
Page 1 of 2

1N6331
ES Components
1N6309 – 1N6345 Family
Bare Die
DATA SHEET
ELECTRICAL CHARACTERISTICS ( Tamb = +25 °C unless otherwise noted. )
Rev: B
Part
Number
1N6309
1N6310
1N6311
1N6312
1N6313
VZ @
IZ2
(Volts)
2.4
2.7
3.0
3.3
3.6
VZ @
IZ1
250uA
(Volts)
1.1
1.2
1.3
1.5
1.8
IZ2
(mA)
20
20
20
20
20
ZZ @
IZ2
(Ω)
30
30
29
24
22
ZZK @
250uA
(Ω)
1200
1300
1400
1400
1400
1N6314 3.9 2.0 20 20 1700
1N6315 4.3 2.4 20 18 1400
1N6316 4.7 2.8 20 16 1500
1N6317 5.1 3.3 20 14 1300
1N6318 5.6 4.3 20
8 1200
1N6319 6.2 5.2 20
3 800
1N6320 6.8 6.0 20
3 400
1N6321 7.5 6.6 20
4 400
1N6322 8.2 7.5 20
5 400
1N6323 9.1 8.4 20
6 500
1N6324 10
9.1 20
6 500
1N6325 11 10 20 7 550
1N6326 12 11 20 7 550
1N6327 13
11.9
95
8 550
1N6328 15 13.8 8.5 10 600
1N6329 16 14.7 7.8 12 600
1N6330 18 16.6 7.0 14 600
1N6331 20 18.5 6.2 18 500
1N6332 22 20.4 5.6 20 500
1N6333 24 22.3 5.2 24 500
1N6334 27 25.2 4.6 27 500
1N6335 30 28.0 4.2 32 500
1N6336 33 30.9 3.8 40 600
1N6337 36 33.7 3.4 50 600
1N6338 39 36.6 3.2 55 700
1N6339 43 40.4 3.0 65 800
1N6340 47 44.2 2.7 75 900
1N6341 51
48 2.5 85 1000
1N6342 56
52.7 2.2 100 1200
1N6343 62
58.4 2.0 125 1300
1N6344 68
64.1 1.8 155 1500
1N6345 75
70.8 1.7 180 1600
Note – Add “C” Suffix for +/-2% Tolerance
IZM
(mA)
177
157
141
128
109
118
99
90
83
76
68
63
57
52
47
43
39
35
33
28
27
24
21
19
18
16
14
13
12
11
9.9
9
8.3
7.6
6.8
6.3
5.7
VZ
(reg)
∆VZ
(Volts)
1.6
1.6
1.6
1.6
1.6
1.6
0.9
0.5
0.4
0.4
0.3
0.35
0.4
0.4
0.5
0.5
0.5
0.55
0.55
0.7
0.75
0.85
0.95
1.05
1.15
1.30
1.45
1.60
1.75
1.90
2.10
2.25
2.50
2.70
2.90
3.20
3.40
IZM
Surge
(Amps)
2.5
2.2
2.0
1.8
1.65
1.5
1.4
1.27
1.17
1.10
0.97
1.23
1.16
1.07
0.97
0.89
0.83
0.77
0.71
0.62
0.58
0.52
0.47
0.43
0.39
0.35
0.31
0.28
0.26
0.24
0.22
0.20
0.18
0.17
0.15
0.13
0.125
VR
(Volts)
1
1
1
1
1
1
1
1.5
2
2.5
3.5
4
5
6
7
8
8.5
9
9.9
11
12
14
15
17
18
21
23
25
27
30
33
36
39
43
47
52
56
IR1 @
+25°C
(uA)
100
60
30
5
3
2
2
5
5
5
5
2
2
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
IR2 @
+150°C
(uA)
200
150
100
20
12
12
12
12
12
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
ND @
250uA
1–3
kHZ
(uV/√Hz)
1
1
1
1
1
1
1
1
1
2
5
5
5
20
40
80
100
100
100
100
100
100
100
100
100
100
100
100
100
100
80
80
80
80
80
80
80
άVZ
(%/°C)
-0.085
-0.080
-0.075
-0.065
-0.055
+0.020
-0.043
+0.025
-0.030
+0.030
-0.028
+0.032
+0.045
+0.050
0.060
0.062
0.068
0.075
0.076
0.079
0.082
0.083
0.079
0.082
0.083
0.085
0.086
0.087
0.088
0.090
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.097
0.097
0.098
0.098
C@
0V
(pF)
2000
1900
1800
1650
1600
1400
1350
1300
1200
1150
1050
1000
900
800
700
600
500
425
400
350
325
300
275
260
240
220
200
185
175
170
165
155
145
135
130
120
110
108 Pratts Junction Road / Sterling, MA 01564 / P) 978.422.7641 / F) 978.422.0011
www.escomponents.com
Page 2 of 2


Features ES Components 1N6309 – 1N6345 Family Bare Die DATA SHEET Small Signal Zener Diodes Wire Bondable, Epoxy Attach Bar e Die Rev: B FEATURES • Wafer fab by Vishay Semiconductor • Silicon pla nar Zener diode MECHANICAL DATA Top Me tal ( Anode ) Back Metal ( Cathode ) Pa ssivation AlSi AuSb Nitride THERMAL C HARACTERISTICS Parameter: Junction Temp erature (max) Operating Temperature Ran ge Storage Temperature Range Symbol: T J TOP TS Value: +175 -55 to +175 -55 t o +175 Unit °C °C °C DEVICE CODE 1 N6310 Base Part Number 1N6309 – 1N634 5 C Tolerance (%VZ) “No suffix” = 5% “C” = 2% E Bottom Side Attach M ethod Epoxy Die Attach B Top Side Conn ection Method Wire Bondable D Form D = Die 108 Pratts Junction Road / Sterli ng, MA 01564 / P) 978.422.7641 / F) 978 .422.0011 www.escomponents.com Page 1 of 2 ES Components 1N6309 – 1N6345 Family Bare Die DATA SHEET ELECTRICAL CHARACTERISTICS ( Tamb = +25 °C unless otherwise noted. ) Rev: B Part Number 1N6309 1N6310 1N6311 1.
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