SFT8600

Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET FEATURES: BVCEO to 400 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250 mA 200° C Operating, Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series High Speed Switching tf = 0.4µS TYP SFT8600 1 AMP 1000 Volts NPN Transistor Maximum Ratings Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100º C Derate above 25º C Operating and Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCER VCBO VEBO IC IB PD Tj, Tstg RθJC Value 400 1000 1000 6 1 100 2.0 2.0 -65 to +200 30 CASE OUTLINE: TO-5 FIGURE 1 OUTLINE AND DIMENSIONS Units V V V A A W mW/ºC ºC ºC/W All dimensions are in inches Tolerances: (unles...