2N4900

Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N4898 VCBO Collector-base voltage 2N4899 2N4900 2N4898 VCEO Collector-emitter voltage 2N4899 2N4900 VEBO Emitter-base voltage IC Collector current ICM Collector current-peak IB Base current PD Total Power Dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE -40 -60 -80 -40 -60 -80 -5 -1.0 -4.0 -1.0 25 150 -65~200 UNIT V V V A A A W VALUE 7.0 UNIT /W Inchange Se...