DATA SHEET
2N3762 2N3763
PNP SILICON TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3762 and 2N37...
DATA SHEET
2N3762 2N3763
PNP SILICON
TRANSISTOR
JEDEC TO-39 CASE
DESCRIPTION
The CENTRAL SEMICONDUCTOR 2N3762 and 2N3763 types are Silicon
PNP Epitaxial Planar
Transistors designed for core driver applications.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
2N3762
2N3763
UNITS
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO VCEO VEBO IC PD PD
TJ,Tstg ΘJA ΘJC
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
40 40
5.0 1.5 1.0 4.0
60 50
-65 to +200 175 44
V V V A W W
°C °C/W °C/W
SYMBOL
TEST CONDITIONS
2N3762 MIN MAX
2N3763 MIN MAX
UNITS
IBL ICEV
ICEV
BVCBO BVCEO
BVEBO VCE(SAT) VCE(SAT) VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(SAT) VBE(SAT)
VCE=½Rated VCBO, VEB=2.0V VCE=½Rated VCBO, VEB=2.0V
VCB=½Rated VCBO, VEB=2.0V. TA=100°C
IC=10µA IC=10mA
IE=10µA IC=10mA, IB=1.0mA IC=150mA, IB=15mA IC=...