TECHNICAL DATA
PNP SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762 2N3762L
2N3763 2N3763...
TECHNICAL DATA
PNP SWITCHING SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/396
Devices
2N3762 2N3762L
2N3763 2N3763L
2N3764
2N3765
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N3762* 2N3764
2N3763* 2N3765
Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
VCEO VCBO VEBO
IC
40 60 40 60
5.0 1.5 2N3762* 1 2N3764 2
Vdc Vdc Vdc Adc
Total Power Dissipation @ TA = +250C
PT
Operating & Storage Junction Temp. Range Top, Tstg
2N3763* 2N3765 1.0 0.5
-55 to +200
W 0C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
2N3762* 2N3764
2N3763* 2N3765
Thermal Resistance Junction-to-Case
RθJC
60
88 0C/W
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly at 5.71 mW/0C for TA > +250C 2) Derate linearly at 2.86 mW/0C for TA > +250C
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHA...