2N3419S TRANSISTOR Datasheet

2N3419S Datasheet, PDF, Equivalent


Part Number

2N3419S

Description

NPN MEDUIM POWER SILICON TRANSISTOR

Manufacture

Microsemi

Total Page 2 Pages
Datasheet
Download 2N3419S Datasheet


2N3419S
TECHNICAL DATA
NPN MEDUIM POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/393
Devices
2N3418
2N3814S
2N3419
2N3419S
2N3420
2N3420S
2N3421
2N3421S
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
tP 1.0 ms, duty cycle 50%
Total Power Dissipation @ TA = +250C(1)
@ TC = +1000C(2)
Operating & Storage Temperature Range
1) Derate linearly 5.72 mW/0C for TA > 250C
2) Derate linearly 150 mW/0C for TC > 1000C
Symbol
VCEO
VCBO
VEBO
IC
PT
Top, Tstg
2N3418, S 2N3419, S
2N3420, S 2N3421, S
60 80
85 125
8.0
3.0
5.0
1.0
15
-65 to +200
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 50 mAdc, IB = 0
Collector-Emitter Cutoff Current
VBE = -0.5 Vdc, VCE = 80 Vdc
VBE = -0.5 Vdc, VCE = 120 Vdc
Collector-Emitter Cutoff Current
VCE = 45 Vdc, IB = 0
VCE = 60 Vdc, IB = 0
Emitter-Base Cutoff Current
VEB = 6.0 Vdc, IC = 0
VEB = 8.0 Vdc, IC = 0
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
2N3418, S; 2N3420, S
2N3419, S; 2N3421, S
Symbol
V(BR)CEO
ICEX
ICEO
IEBO
Unit
Vdc
Vdc
Vdc
Adc
W
W/0C
0C
Min.
60
80
TO- 5*
2N3418, 2N3419,
2N3420, 2N3421
TO-39* (TO205-AD)
2N3418S, 2N3419S,
2N3420S, 2N3421S
*See Appendix A for
Package Outline
Max.
Unit
Vdc
µAdc
0.3
0.3
µAdc
5.0
5.0
µAdc
0.5
10
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2

2N3419S
2N3418, S, 2N3419, S, 2N3420, S, 2N3421, S, JAN SERIES
ELECTRICAL CHARACTERISTICS
Characteristics
ON CHARACTERISTICS
Forward-Current Transfer Ratio
IC = 100 mAdc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 1.0 Adc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 2.0 Adc, VCE = 2.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
IC = 5.0 Adc, VCE = 5.0 Vdc
2N3418, S; 2N3419, S
2N3420, S; 2N3421, S
Base-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc, IB = 0.1 Adc
IC = 2.0 Adc, IB = 0.2 Adc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short Circuit
Forward Current Transfer Ratio
IC = 0.1 Adc, VCE = 10 Vdc, f = 20 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
VBE(off) = -3.7 Vdc
IC = 1.0 Adc, IB1 = 100 mAdc
VBE(off) = -3.7 Vdc
IC = 1.0 Adc, IB2 = -100 mAdc
SAFE OPERATING AREA
DC Tests
TC = 1000C, 1 Cycle, t = 1.0 s
Test 1
VCE = 5.0 Vdc, IC = 3.0 Adc
Test 2
VCE = 37 Vdc, IC = 0.4 Adc
TEST 3
VCE = 60 Vdc, IC = 0.185 Adc
2N3418, S; 2N3420, S
VCE = 80 Vdc, IC = 0.12 Adc
2N3419, S; 2N3421, S
Symbol
hFE
VBE(sat)
VCE(sat)
hfe
Cobo
td
tr
ts
tf
TA = 250C, IB = 0.5 Adc, IC = 3.0 Adc
Clamped Switching
Min.
20
40
20
40
15
30
10
15
0.6
0.7
1.3
Max.
60
120
1.2
1.4
0.25
0.5
8.0
150
0.08
0.22
1.10
0.20
Unit
Vdc
Vdc
pF
µs
µs
µs
µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2


Features TECHNICAL DATA NPN MEDUIM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500 /393 Devices 2N3418 2N3814S 2N3419 2 N3419S 2N3420 2N3420S 2N3421 2N3421S Qualified Level JAN JANTX JANTXV MAXI MUM RATINGS Ratings Collector-Emitter V oltage Collector-Base Voltage Emitter-B ase Voltage Collector Current tP ≤ 1. 0 ms, duty cycle ≤ 50% Total Power Di ssipation @ TA = +250C(1) @ TC = +1000C (2) Operating & Storage Temperature Ran ge 1) Derate linearly 5.72 mW/0C for TA > 250C 2) Derate linearly 150 mW/0C fo r TC > 1000C Symbol VCEO VCBO VEBO IC PT Top, Tstg 2N3418, S 2N3419, S 2N342 0, S 2N3421, S 60 80 85 125 8.0 3.0 5.0 1.0 15 -65 to +200 ELECTRICAL CHARACT ERISTICS Characteristics OFF CHARACTERI STICS Collector-Emitter Breakdown Curre nt IC = 50 mAdc, IB = 0 Collector-Emitt er Cutoff Current VBE = -0.5 Vdc, VCE = 80 Vdc VBE = -0.5 Vdc, VCE = 120 Vdc C ollector-Emitter Cutoff Current VCE = 4 5 Vdc, IB = 0 VCE = 60 Vdc, IB = 0 Emit ter-Base Cutoff Current VEB = 6.0 Vdc, IC = 0 VEB = 8.0 Vdc, IC.
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