1N6638US DIODES Datasheet

1N6638US Datasheet, PDF, Equivalent


Part Number

1N6638US

Description

SWITCHING DIODES

Manufacture

Microsemi

Total Page 5 Pages
Datasheet
Download 1N6638US Datasheet


1N6638US
1N6638US, 1N6642US, 1N6643US
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
DESCRIPTION
This popular surface mount equivalent JEDEC registered switching/signal diodes are military
qualified and available with internal metallurgical bonded construction. These small low
capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a
“D-5B” package. They may be used in a variety of fast switching applications including
computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire
memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety
of other switching/signal diodes.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643.
Ultra fast recovery time.
Very low capacitance.
Metallurgically bonded.
Non-cavity glass package.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
Replacements for 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR.
RoHS compliant devices available (commercial grade only).
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“B” SQ-MELF
(D-5B) Package
Also available in:
“D” Package
(axial-leaded)
1N6638_42_43
APPLICATIONS / BENEFITS
Small size for high density mounting (see package illustration).
Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet: 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temp
Thermal Resistance Junction-to-End Cap
Thermal Resistance Junction-to-Ambient (1)
Peak Forward Surge Current @ TA = +25 oC
(Test pulse = 8.3 ms, half-sine wave.)
Average Rectified Forward Current @ TA = +75 oC
(Derate at 4.6 mA/°C Above TEC = + 110 °C)
TJ and TSTG
RӨJEC
RӨJA
IFSM
-65 to +175
40
250
2.5
oC
oC/W
oC/W
A
IO 300 mA
Breakdown Voltage:
1N6638US
1N6642US
VBR
150 V
100
1N6643US
75
Working Peak Reverse Voltage:
1N6638US
1N6642US
VRWM
125 V
75
1N6643US
50
NOTES: 1. TA = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); RΘJA with a defined PCB
thermal resistance condition included, is measured at IO = 300 mA.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0218-1, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 1 of 5

1N6638US
1N6638US, 1N6642US, 1N6643US
MECHANICAL and PACKAGING
CASE: Voidless hermetically sealed hard glass.
TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request.
MARKING: Body painted and alpha numeric.
POLARITY: Cathode indicated by band.
Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See Electrical Characteristics
table
PART NOMENCLATURE
JAN 1N6638 US (e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Symbol
VBR
VRWM
VF
IR
C
trr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is
reached.
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise noted.
TYPE
NUMBER
1N6638US
1N6642US
1N6643US
MAXIMUM
FORWARD
VOLTAGE
VF @ IF
V @ mA
0.8 V @ 10 mA
0.8 V @ 10 mA
0.8 V @ 10 mA
V @ mA
1.1 V @ 200 mA
1.2 V @ 100 mA
1.2 V @ 100 mA
MAXIMUM DC REVERSE CURRENT
IR1
VR=
20 V
IR2
VR=VRWM
nA nA
35 500
25 500
50 500
IR3
VR=20 V
TA=
+150 oC
µA
50
50
75
IR4
VR=VRWM
TA=
+150 oC
µA
100
100
100
REVERSE
RECOVERY
TIME
trr
(Note 1)
MAXIMUM
FORWARD
RECOVERY
VOLTAGE AND
TIME
IF=200mA, tr=1ns
VFRM
tfr
ns V ns
4.5 5.0 20
5.0 5.0 20
6.0 5.0 20
NOTE: 1. Reverse Recovery Time Test Conditions – IF=IR=10 mA, IR(REC) = 1.0 mA, C=3 pF, RL = 100 ohms.
MAXIMUM
JUNCTION
CAPACITANCE
f = 1 MHz
Vsig = 50 mV
(p-p)
VR=0 V VR=1.5 V
pf pf
2.5 2.0
5.0 2.8
5.0 2.8
T4-LDS-0218-1, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 2 of 5


Features 1N6638US, 1N6642US, 1N6643US Available on commercial versions VOIDLESS HERMET ICALLY SEALED SWITCHING DIODES Qualifie d per MIL-PRF-19500/578 DESCRIPTION Th is popular surface mount equivalent JED EC registered switching/signal diodes a re military qualified and available wit h internal metallurgical bonded constru ction. These small low capacitance diod es with very fast switching speeds are hermetically sealed and bonded into a D-5B” package. They may be used in a variety of fast switching application s including computers and peripheral eq uipment such as magnetic cores, thin-fi lm memories, plated-wire memories, as w ell as decoding or encoding application s, etc. Microsemi also offers a variety of other switching/signal diodes. Imp ortant: For the latest information, vis it our website http://www.microsemi.com . FEATURES • JEDEC registered surface mount equivalents of 1N6638, 1N6642, a nd 1N6643. • Ultra fast recovery time . • Very low capacitance. • Metallurgically bonded. • Non.
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