1N6643 DIODES Datasheet

1N6643 Datasheet, PDF, Equivalent


Part Number

1N6643

Description

SWITCHING DIODES

Manufacture

Microsemi

Total Page 5 Pages
Datasheet
Download 1N6643 Datasheet


1N6643
1N6638, 1N6642, 1N6643
Available on
commercial
versions
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
DESCRIPTION
These popular JEDEC registered switching/signal diodes are military qualified and available
with internal metallurgical bonded construction. These small low capacitance diodes with very
fast switching speeds are hermetically sealed and bonded into a “D” package. They may be
used in a variety of fast switching applications including computers and peripheral equipment
such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or
encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes.
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
JEDEC registered 1N6638, 1N6642, and 1N6643.
Ultra fast recovery time.
Very low capacitance.
Metallurgically bonded.
Non-cavity glass package.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
Replacements for 1N4148, 1N4148-1, 1N4150, 1N4150-1, and 1N914.
RoHS compliant devices available (commercial grade only).
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
“D” Package
APPLICATIONS / BENEFITS
Small size for high density mounting using flexible thru-hole leads (see package illustration).
Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS @ TA = +25 oC unless otherwise noted.
Also available in:
“B” SQ MELF or
D-5B Package
(surface mount)
1N6638US_42US_43US
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temp
Thermal Resistance Junction-to-Lead = 0.375 inch (1)
Thermal Resistance Junction-to-Ambient (1)
Peak Forward Surge Current @ TA = +25 oC
(Test pulse = 8.3 ms, half-sine wave.)
Average Rectified Forward Current @ TA = +75 oC
(Derate at 3.0 mA/oC above TL = +75 oC @ L = 3/8”)
TJ and TSTG
R ӨJL
R ӨJA
IFSM
-65 to +175
150
250
2.5
oC
oC/W
oC/W
A
IO 300 mA
Breakdown Voltage:
1N6638
1N6642
V BR
150 V
100
1N6643
75
Working Peak Reverse Voltage:
1N6638
V RWM
125 V
1N6642
75
1N6643
50
NOT ES:
1. T A = +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for axial = .092 inch (2.34 mm) diameter, strip = .030 inch (0.76 mm) x 1 inch
(25.4 mm) long, lead length L ≤ .187 inch (≤ 4.75 mm); R ΘJA with a defined PCB thermal resistance
condition included, is measured at IO = 300 mA.
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0218, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 1 of 5

1N6643
1N6638, 1N6642, 1N6643
MECHANICAL and PACKAGING
CASE: Voidless hermetically sealed hard glass.
TERMINALS: Tin-lead plate with >3% lead. Solder dip is available upon request.
MARKING: Body painted and alpha numeric.
POLARITY: Cathode indicated by band.
Tape & Reel option: Standard per EIA-296. Consult factory for quantities.
See Package Dimensions on last page.
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
PART NOMENCLATURE
JAN 1N6638 (e3)
RoHS Compliance
e3 = RoHS compliant (available
in commercial grade only)
Blank = non-RoHS compliant
JEDEC type number
See Electrical Characteristics
table
Symbol
V BR
V RWM
VF
IF
IR
C
t rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Forward Current: The forward current dc value, no alternating component.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is
reached.
ELECTRICAL CHARACTERISTICS @ 25oC unless otherwise noted.
TYPE
NUMBER
1N6638
1N6642
1N6643
MAXIMUM
FORWARD
VOLT AGE
VF @ IF
V @ mA
0.8 V @ 10 mA
0.8 V @ 10 mA
0.8 V @ 10 mA
V @ mA
1.1 V @ 200 mA
1.2 V @ 100 mA
1.2 V @ 100 mA
MAXIMUM DC REVERSE CURRENT
IR1
VR=
20 V
nA
35
25
50
IR2
V R =V RWM
nA
500
500
500
IR3
V R=20 V
T A=
+150 oC
µA
50
50
75
IR4
V R =V RWM
T A=
+150 oC
µA
100
100
100
REVERSE
MAXIMUM
RECOVERY FORWARD
T IME
RECOVERY
trr
(Note 1)
VOLTAGE AND
T IME
IF =200mA, tr =1ns
V FRM
t fr
ns V ns
4.5 5.0 20
5.0 5.0 20
6.0 5.0 20
NOTE: 1. Reverse Recovery Time Test Conditions – IF=IR=10 mA, IR(REC) = 1.0 mA, C=3 pF, RL = 100 ohms.
MAXIMUM
JUNCT ION
CAP AC IT ANCE
f = 1 MHz
Vsig = 50 mV
(p-p)
V R=0 V V R=1.5 V
pf pf
2.5 2.0
5.0 2.8
5.0 2.8
T4-LDS-0218, Rev. 1 (111513)
©2011 Microsemi Corporation
Page 2 of 5


Features 1N6638, 1N6642, 1N6643 Available on com mercial versions VOIDLESS HERMETICALLY SEALED SWITCHING DIODES Qualified per MIL-PRF-19500/578 DESCRIPTION These po pular JEDEC registered switching/signal diodes are military qualified and avai lable with internal metallurgical bonde d construction. These small low capacit ance diodes with very fast switching sp eeds are hermetically sealed and bonded into a “D” package. They may be us ed in a variety of fast switching appli cations including computers and periphe ral equipment such as magnetic cores, t hin-film memories, plated-wire memories , as well as decoding or encoding appli cations, etc. Microsemi also offers a v ariety of other switching/signal diodes . Important: For the latest informatio n, visit our website http://www.microse mi.com. FEATURES • JEDEC registered 1N6638, 1N6642, and 1N6643. • Ultra f ast recovery time. • Very low capacit ance. • Metallurgically bonded. • N on-cavity glass package. • JAN, JANTX, JANTXV and JANS qualif.
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