SILICON TRANSISTOR
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continu...
Description
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol VCEO VCBO VEBO
ic
PD
pd
Tj.T stg
Symbol R0JC Rejc
Value 20 30 5.0 100 350 2.8 1.0 8.0
-55 to +150
Max
125 357,
Unit Vdc Vdc Vdc
mAdc
mW
mW/°C
Watt
mW/°C
°C
Unit
°C/W °c/w
BF494 BF495
CASE 29-02, STYLE 1 TO-92 (TO-226AA)
SILICON
Refer to BF254 for graphs.
ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted)
Characteristic
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = 1-0 mAdc, Ib = 0)
V(BR)CEO
20
Collector-Base Breakdown Voltage dC = 10 uAdc, Ie = 0)
V(BR)CBO
30
Emitter-Base Breakdown Voltage dE = 10 nAdc, Ic = 0)
V(BR)EBO
5....
Similar Datasheet