MMBTA64

Darlington Transistor PNP Silicon MMBTA64 COLLECTOR 3 1 BASE 2 EMITTER 3 1 2 SOT-23 MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCES VCBO VEBO IC Value -30 -30 -10 -500 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R θJA TJ,Tstg Device Marking MMBTA63=2U , MMBTA64=2V ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage(IC =-100 uAdc, IB=0) Collector Cufoff Current(VCB=-30Vdc, IE=0) Emitter Cufoff Current(VEB =-10Vdc, IC=0) 1. FR-5=1.0 I I0.75I I0.062 in 2. Pulse Test: Pulse Width<_ 300us, Duty Cycle <_ 2.0% Value 225 1.8 556 -55 to +150 Unit mW mW/ C C/W C Symbol Min Max Unit V(BR)CEO -30 - Vdc ICBO IEBO - -0.1 uAdc - -0.1 uAdc WEITRON http://www.weitron.com.tw MMBTA64 ELECTRICAL ...