MMBTH10

MMBTH10 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) VHF/UHF TRANSISTOR NPN SILICON Refer to MPSH10 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Symbol v CEO v CBO v EBO THERMAL CHARACTERISTICS Characteristic "Total Device Dissipation, T^ = 25°C Derate above 25°C Symbol PD Storage Temperature TStQ "Thermal Resistance Junction to Ambient r sja "Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage OC = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 100 Mdc, l£ = 0) Emitter-Base Breakdown Voltage (lg = 10 /xAdc, lc = 0) Collector Cutoff Current (VC B = 25 Vdc, El = 0) Emitter Cutoff Current (V BE = 2.0 Vdc, lc = 0) ON CHARACTERISTICS DC Current Gain dC = 4.0 mAdc, Vce = 10 Vdc) Collector-Emitter Saturation Voltage Oc = 4.0 mAdc, Ib = 0.4 mAdc) Base-Emitter On Voltage c(l ...