Silicon Transistor. BC557 Datasheet

BC557 Transistor. Datasheet pdf. Equivalent


Fairchild Semiconductor BC557
January 2016
BC556 / BC557 / BC558 / BC559 / BC560
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier
• High-Voltage: BC556, VCEO = -65 V
• Low-Noise: BC559, BC560
• Complement to BC546, BC547, BC548, BC549, and BC550
123
Straight Lead
Bulk Packing
TO-92
1. Collector
12
3
2. Base
3. Emitter
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
BC556ABU
BC556ATA
BC556BTA
BC556BTF
BC556BTFR
BC557ATA
BC557BTA
BC557BTF
BC558BTA
BC559BTA
BC559CTA
BC560CTA
Marking
BC556A
BC556A
BC556B
BC556B
BC556B
BC557A
BC557B
BC557B
BC558B
BC559B
BC559C
BC560C
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Ammo
Ammo
Tape and Reel
Ammo
Ammo
Ammo
Ammo
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
1
www.fairchildsemi.com


BC557 Datasheet
Recommendation BC557 Datasheet
Part BC557
Description PNP Epitaxial Silicon Transistor
Feature BC557; BC556 / BC557 / BC558 / BC559 / BC560 — PNP Epitaxial Silicon Transistor January 2016 BC556 / BC55.
Manufacture Fairchild Semiconductor
Datasheet
Download BC557 Datasheet




Fairchild Semiconductor BC557
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
BC556
-80
VCBO Collector-Base Voltage
BC557 / BC560
BC558 / BC559
-50 V
-30
BC556
-65
VCEO Collector-Emitter Voltage
BC557 / BC560
BC558 / BC559
-45 V
-30
VEBO
IC
ICP
IBP
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Peak Collector Current (Pulse)
Peak Base Current (Pulse)
Junction Temperature
Storage Temperature Range
-5
-100
-200
-200
150
-65 to +150
V
mA
mA
mA
°C
°C
Thermal Characteristics(1)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
Unit
PD
RθJA
Total Power Dissipation
Derate Above 25°C
Thermal Resistance, Junction-to-Ambient
500 mW
4.0 mW/°C
250 °C/W
Note:
1. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
2
www.fairchildsemi.com



Fairchild Semiconductor BC557
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
ICBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
NF
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCB = -30 V, IE = 0
VCE = -5 V, IC = -2 mA
IC = -10 mA, IB = -0.5 mA
IC = -100 mA, IB = -5 mA
IC = -10 mA, IB = -0.5 mA
IC = -100 mA, IB = -5 mA
VCE = -5 V, IC = -2 mA
VCE = -5 V, IC = -10 mA
VCE = -5 V, IC = -10 mA,
f = 10 MHz
Output Capacitance
VCB = -10 V, IE = 0, f = 1 MHz
Noise
BC556 / BC557 / BC558 VCE = -5 V, IC = -200 μA,
BC559 / BC560
f = 1 kHz, RG = 2 kΩ
Figure BC559
BC560
VCE = -5 V, IC = -200 μA,
RG = 2 kΩ, f = 30 to 15000 MHz
110
-600
Typ.
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
Max.
-15
800
-300
-650
-750
-800
6
10
4
4.0
2.0
Unit
nA
mV
mV
mV
MHz
pF
dB
hFE Classification
Classification
hFE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
© 2002 Fairchild Semiconductor Corporation
BC556 / BC557 / BC558 / BC559 / BC560 Rev. 1.7
3
www.fairchildsemi.com







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