Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 400 V to 600 V VRRM • Not ESD Sensitive
No...
Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 400 V to 600 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3212 thru 1N3214R
VRRM = 400 V - 600 V IF = 15 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3212 (R)
1N3213 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 150 °C TC = 25 °C, tp = 8.3 ms
400 280 400 15
297
-55 to 150 -55 to 150
500 350 500 15
297
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3212 (R)
Diode forward voltage
VF
Reverse current
IR
Thermal characteristics Thermal resistance,...
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