1N3214

Silicon Standard Recovery Diode Features High Surge Capability Types from 400 V to 600 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3212 thru 1N3214R VRRM = 400 V - 600 V IF = 15 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3212 (R) 1N3213 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 150 °C TC = 25 °C, tp = 8.3 ms 400 280 400 15 297 -55 to 150 -55 to 150 500 350 500 15 297 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3212 (R) Diode forward voltage VF Reverse current IR Thermal characteristics Thermal resistance,...