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VS-1N1...A, VS-1N36..A Series
Vishay Semiconductors
Medium Power Silicon Rectifier Diodes, (Stud Version), 12 A
DO-4 (DO-203AA)
PRIMARY CHARACTERISTICS
IF(AV) Package
12 A DO-4 (DO-203AA)
Circuit configuration
Single
FEATURES
• Voltage ratings from 50 V to 1000 V
• High surge capability
• Low thermal impedance
• High temperature rating
• Can be supplied as JAN and JAN-TX devices in accordance with MIL-S-19500/260
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
TC
IFSM
50 Hz 60 Hz
I2t 50 Hz 60 Hz
TJ VRRM
Range
Note
• JEDEC® registered values are in bold
VALUES 12 150 230 240 260 240
-65 to +200 50 to 1000
UNITS A °C
A
A2s
°C V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VRRM, MAXIMUM REPETITIVE PEAK
REVERSE VOLTAGE
(TC = -65 °C TO 200 °C) V
VR(RMS), MAXIMUM RMS REVERSE VOLTAGE
(TC = -65 °C.