Document
VS-1N1183, VS-1N3765, VS-1N1183A, VS-1N2128A Series
www.vishay.com
Vishay Semiconductors
Power Silicon Rectifier Diodes, 35 A, 40 A, 60 A
DO-203AB (DO-5)
PRODUCT SUMMARY
IF(AV) Package Circuit configuration
35 A, 40 A, 60 A DO-203AB (DO-5)
Single diode
DESCRIPTION/FEATURES
• Low leakage current series
• Good surge current capability up to 1000 A
• Can be supplied to meet stringent military, aerospace, and other high reliability requirements
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER IF(AV)
IFSM
I2t I2t VRRM TJ
TEST CONDITIONS
TC 50 Hz 60 Hz 50 Hz 60 Hz
Range
1N1183 35 (1) 140 (1) 480 500 (1) 1140 1040 16 100
50 to 600 (1)
-65 to 200
Note (1) JEDEC® registered values
1N3765 35 (1) 140 (1) 380 400 (1) 730 670 10 300
700 to 1000 (1)
-65 to 200
1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000
50 to 600 (1)
-65 to 200
1N2128A 60 (1) 140 (1) 860 900 (1) 3700 3400 52 500.