MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (a T"a = 25°C Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
"C
PD
Pd
Tj, Tstg
Value 40 60 6.0 200 0.36 2.06
1.2 6.9
-65 to + 200
Unit Vdc Vdc Vdc
mAdc
Watt mW/°C Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol Rojc R&JA
0.49
Unit
°C/mW °C/mW
2N3946 2N3947
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown VoltageO) c(l = 10 mAdc)
Co I lector- Base Breakdown Voltage c(l = 10 nAdc, Ie = 0)
Emitter-Base Breakdown Voltage E(l = 10 ixAdc, lc - 0)
Collector Cutoff Current
(Vqe = 40 Vdc, Vob =...
