)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Conti...
)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (S TA = 25°C
Derate above 25°C Total Device Dissipation (a Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
"c
PD
PD
Tj. T stg
Value 40 80 6.0 2.0
1.0 6.0 5.0 28.6
-65 to + 200
Unit Vdc Vdc Vdc Adc Watt
mW/°C Watts mW/°C
°C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol R&jc R&JA
Max
35 175
Unit °C/W °C/W .
2N5859
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
SWITCHING
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(l) (Iq = 10 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (lc = 100 >xAdc, lg = 0)
Emitter-Base Breakdown Voltage He = 10 n-Adc, lc = 0)
Collector Cutoff Current (Vce = 50 Vdc,...
