2N6431

2N6430 2N6431 NPN 2N6432 2N6433 PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6430 series devices are complementary small signal silicon transistors manufactured by the epitaxial planar process, designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage (NPN) Emitter-Base Voltage (PNP) Continuous Collector Current Power Dissipation (TC=25°C) Power Dissipation Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO VEBO IC PD PD TJ, Tstg ΘJA ΘJC 2N6430 2N6432 200 2N6431 2N6433 300 200 300 6.0 5.0 100 1.8 500 -65 to +200 0.35 97.2 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N6430 2N6431 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=160V (2N6430, 2N6432) - 100 ICBO VCB=200V (2N6431, 2N6433) - 100 IEBO VEB=4....