3N212

3N211-3N213 High-reliability discrete products and engineering services since 1977 DUAL GATE MOSFET VHF AMPLIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage Drain Current Gate Current Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Lead Temperature, 1/16” from Seated Surface for 10 seconds Junction Temperature Range Storage Temperature Range Symbol VDS VDG1 VDG2 ID IG1 IG2 PD PD TL TJ Tstg 3N211 3N212 3N213 27 35 35 40 35 40 50 ±10 ±10 360 2.4 1.2 8.0 300 -65 to +175 -65 to +175 Unit Vdc Vdc mAdc mAdc mW mW/°C Watt mW/°C °C °C °C ELECTRICAL CHARACTERISTICS (TC = 25°C) Characteristics OFF CHARACTERISTICS Drain Source Breakdown Voltage (1) (ID = 10 ...