MMBFU310LT1G

MMBFU310LT1G JFET Transistor N−Channel Features These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR− 5 = 1.0  0.75  0.062 in. PD 225 mW 1.8 mW/°C RqJA 556 °C/W TJ, Tstg − 55 to +150 °C www.onsemi.com 2 SOURCE 3 GATE 1 DRAIN 3 1 2 SOT−23 (TO−236AB) CASE 318−08 STYLE 10 MARKING DIAGRAM M6C M G G 1 M6C = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date C...