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GENERAL-PURPOSE TRANSISTOR. J108 Datasheet

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GENERAL-PURPOSE TRANSISTOR. J108 Datasheet






J108 TRANSISTOR. Datasheet pdf. Equivalent




J108 TRANSISTOR. Datasheet pdf. Equivalent





Part

J108

Description

JFET GENERAL-PURPOSE TRANSISTOR



Feature


MAXIMUM RATINGS Rating Drain-Gate Voltag e Gate-Source Voltage Gate Current Tota l Device Dissipation (a T/ = 25°C Dera te above 25°C Junction Temperature Ran ge Storage Channel Temperature Range S ymbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit V dc Vdc mAdc mW mW/°C °C °C J107, J1 08 J109, J110 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET GENERA.
Manufacture

Motorola

Datasheet
Download J108 Datasheet


Motorola J108

J108; L-PURPOSE TRANSISTOR —N-CHANNEL DEPLET ION ELECTRICAL CHARACTERISTICS (TA = 2 5°C unless otherwise noted Characteris tic OFF CHARACTERISTICS Gate-Source Br eakdown Voltage (VDS = 0, Iq = -10 MAdc ) Gate Reverse Current (VG S = -15 Vdc, VDS = 0) (Vqs = -15 Vdc, VDs = 0, TA = 100°C) Gate Source Cutoff Voltage (Vd s = 15 Vdc, Iq = 10 nAdc) ON CHARACTERI STICS J 107 J108 J109.


Motorola J108

J110 Zero-Gate-Voltage Drain Current(1 ) (vD s = 15, vG s = o) J107 J108 J109 J110 Drain-Source On-Resistance (v Ds < 0.1 v, v GS = o v) SMALL-SIGNAL CHAR ACTERISTICS J107 J108 J109 J110 Drain Gate + Source Gate On-Capacitance (Vds = o vdc, v G s .


Motorola J108

.

Part

J108

Description

JFET GENERAL-PURPOSE TRANSISTOR



Feature


MAXIMUM RATINGS Rating Drain-Gate Voltag e Gate-Source Voltage Gate Current Tota l Device Dissipation (a T/ = 25°C Dera te above 25°C Junction Temperature Ran ge Storage Channel Temperature Range S ymbol VDG VGS "G PD Tj Tstg Value -25 -25 10 310 2.82 135 -65 to +150 Unit V dc Vdc mAdc mW mW/°C °C °C J107, J1 08 J109, J110 CASE 29-02, STYLE 5 TO-92 (TO-226AA) JFET GENERA.
Manufacture

Motorola

Datasheet
Download J108 Datasheet




 J108
MAXIMUM RATINGS
Rating
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
Total Device Dissipation (a T/\ = 25°C
Derate above 25°C
Junction Temperature Range
Storage Channel Temperature Range
Symbol
VDG
VGS
"G
PD
Tj
Tstg
Value
-25
-25
10
310
2.82
135
-65 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
°C
J107, J108
J109, J110
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET
GENERAL-PURPOSE
TRANSISTOR
N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage
(VDS = 0, Iq = -10 MAdc)
Gate Reverse Current
(VG S = -15 Vdc, VDS = 0)
(Vqs = -15 Vdc, VDs = 0, TA = 100°C)
Gate Source Cutoff Voltage
(Vds = 15 Vdc, Iq = 10 nAdc)
ON CHARACTERISTICS
J 107
J108
J109
J110
Zero-Gate-Voltage Drain Current(1)
(vD s = 15, vG s = o)
J107
J108
J109
J110
Drain-Source On-Resistance
(v Ds < 0.1 v, v GS = o v)
SMALL-SIGNAL CHARACTERISTICS
J107
J108
J109
J110
Drain Gate + Source Gate On-Capacitance
(Vds = o vdc, v G s = o, f = 1.0 mhz)
Drain Gate Off-Capacitance
(Vds = o vdc, v G s = - 10 v, f = i.o MHz)
Sou'ce Gate Off-Capacitance
(Vds = o vdc, vgs = -10 v, f = 1.0 mhz)
(1) Pulse Duration 300 jis. Duty Cycle s 2.0%.
Symbol
Min
V (BR)GSS
'GSS
-25
-
v GS(off)
-0.5
-3.0
-2.0
-0.5
!DSS
r DS(on)
c dg(on)
+
c sg(on)
c dg(off)
c sg(off)
100
80
40
10
-
Typ Max Unit
- - Vdc
- -3.0
nAdc
-200
Vdc
-4.5
-10
- -6.0
-4.0
mAdc
'
ohms
8.0
8.0
_ 12
18
85 PF
.
15
15
PF
PF
6-105




 J108
J107, J108, J109, J110
FIGURE 1 COMMON SOURCE INPUT
CAPACITANCE versus GATE-SOURCE VOLTAGE
FIGURE 2 COMMON SOURCE REVERSE FEEDBACK
CAPACITANCE versus GATE-SOURCE VOLTAGE
V DS = V
L,
-4.0 -8.0 -12 -16
VGS , GATE-SOURCE VOLTAGE (VOLTS)
S 40
V0S = V
\ <;nv
V 10V
J
-4.0
-8.0
-12 -16
VG S. GATE-SOURCE VOLTAGE (VOLTS)
FIGURE 3 ON-RESISTANCE versus GATE-SOURCE
CUTOFF VOLTAGE
lb
12
*r
C
Slon):
VDS
°' 1 V
Vnc - Fin \/
id = i.o ma
-1.0
-2.0
1
-3.0
-4.0
5.0 -6.0 -7.C
VG s|otf). GATE-SOURCE CUTOFF VOLTAGE (VOLTS)
FIGURE 4 OUTPUT CHARACTERISTIC
100
90
_< 80
5 60
CC
CO
3 so
I 40
VGS(off)= -2.0 V
_s
/
/
/
s*
--
V
I
^
2,30 it --—
20 vr.\ .
10 Ls
V~~
ii
vGs = o V
1
1
1
-0.75 V
-1.00 V
-- 1.25 V
I
6.0 8.0
10
12
14
16
V DS , DRAIN-SOURCE VOLTAGE (VOLTS)
FIGURE 5 OUTPUT CHARACTERISTIC
VGSIoff)= - 30V
180
_< 160
-E 140
I 120
3 100
-/1Q 80
a 60
40
20
2.0
-1
VGc =
.
V
1
-1.0 /
-1.5 V
-2.0 V
4.0 6.0 8.0 10
-2.5 V
1
12 14 16
V DS. DRAIN-SOURCE VOLTAGE (VOLTS)
6-106
FIGURE 6 OUTPUT CHARACTERISTIC
vGS|oHI = -«-<>V
s »-""*
/
y/ r
// /*
IA
V
I
V G <; =
I
V
|
-0.5 V
I
-1.0 V
I
-1.5 V
!I
-2.0 V
I
-2.5 V
- 3.0 V
4.0 6.0 8.0 10
12 14
16
V DS , DRAIN-SOURCE VOLTAGE (VOLTS)
I




 J108
J107, J108, J109, J110
360
< 320
~: 280
£ 240
az
3
z
200
I 160
_P120
FIGURE 7 OUTPUT CHARACTERISTIC
=vGS|off) -5.0 V
VGS = V
-0.5 V
-1.0 V
I
-1.5 V
-j
-2.5 V
-3.0 V
-3.5 V
"
4.0 6.0 8.0 10 12 14 16 18 20
VDS , DRAIN-SOURCE VOLTAGE (VOLTS)
6-107



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