Document
MAXIMUM RATINGS
Rating Drain-Gate Voltage Gate-Source Voltage Gate Current Total Device Dissipation (a T/\ = 25°C
Derate above 25°C Junction Temperature Range Storage Channel Temperature Range
Symbol VDG VGS
"G
PD
Tj Tstg
Value -25 -25
10 310 2.82 135
-65 to +150
Unit Vdc Vdc
mAdc
mW
mW/°C
°C
°C
J107, J108 J109, J110
CASE 29-02, STYLE 5
TO-92 (TO-226AA)
JFET GENERAL-PURPOSE
TRANSISTOR
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
Characteristic
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage (VDS = 0, Iq = -10 MAdc)
Gate Reverse Current
(VG S = -15 Vdc, VDS = 0) (Vqs = -15 Vdc, VDs = 0, TA = 100°C)
Gate Source Cutoff Voltage (Vds = 15 Vdc, Iq = 10 nAdc)
ON CHARACTERISTICS
J 107 J108 J109 J110
Zero-Gate-Voltage Drain Current(1)
(vD s = 15, vG s = o)
J107 J108 J109 J110
Drain-Source On-Resistance
(v Ds < 0.1 v, v GS = o v)
SMALL-SIGNAL CHARACTERISTICS
J107 J108 J109 J110
Drain Gate + Source Gate On-Capacitance (Vds = o vdc, v G s.