P2N3020

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol VCEO VCBO VEBO ic PD pd Tj, T s tg Symbol Rwc Roja Value 80 120 7.0 1.0 1.0 8.0 2.5 20 -55 to +150 Max 50 125 Unit Vdc Vdc Vdc Adc Watts mW/°C Watts mW/°C °C Unit °C/W °c/w P2N3019 P2N3020 CASE 29-3, STYLE 1 TO-92 (TO-226AE) ONE WATT AMPLIFIER TRANSISTORS NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25 °C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (1) {l,C = 30 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC'= 100uAdc, Ie = 0) Emitter-Base Breakdown Voltage (IE = 100uAdc, Ic = 0) Collector Cutoff Current (VcB = 90 Vd...