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1N6263

EIC

SCHOTTKY BARRIER DIODES

1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : • For general purpose applications • Metal-on-silicon Schottky barrier dev...


EIC

1N6263

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Description
1N5711 and 1N6263 VRRM : 70V , 60V FEATURES : For general purpose applications Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. This diode is also available in the MiniMELF case with type designation LL5711 and LL6263. Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g SCHOTTKY BARRIER DIODES DO - 35 Glass (DO-204AH) 0.079(2.0 )max. Cathode Mark 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified. Parameter Repetitive Peak Reverse Voltage Power Dissipation (Infinite Heatsink) Maximum Single Cycle Surge 10 µs Square Wave Thermal Resistance Junction to Amb...




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