1N5711 | EDCON
Schottky Barrier Diode
1N5711 / 1N6263
Schottky Barrier Diode
Features
1. For general purpose applications. 2. Metal-on-silicon schottky barrier device
which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. 3. This diode is also available in th.
- 1N5711 | Silicon Supplies
- Small-signal ultra-fast switching schottky diode
- 70V 15mA Schottky Diode – 1N5711
Small-si gnal ultra-fast switching schottky diode in bare die.
- 70V 15mA Schottky Diode – 1N5711
Small-si gnal ultra-fast switching schottky diode in bare die form
Rev 1.0 01/02/19
Features:
Picose cond switching speed
Low fo rward voltage drop 70V br eakdown voltage Guard-Ring for over-voltage protection
High reliability tested grades & matched
charac teristic options.
Orderin g Information
The following part suffixes apply: No suf fix - MIL-STD-750 /2073 Visual Inspection “H” .
- 1N5711 | Agilent
- Schottky Barrier Diodes
- Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Ser.
- Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high .
- 1N5711 | Digitron Semiconductors
- SCHOTTKY RECTIFIERS
- 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCH.
- 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Parameter
Peak Inverse Voltage
1N5711 1N6263
Power Dissipation (Infinite Heatsink)
Maximum Single.
- 1N5711 | LGE
- Small Signal Schottky Diodes
- Features
For general purpos e applications Metal s ilicon s chottky barrier device which is protecte.
- Features
For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fas t s witching m ake it ideal for protection of MOS devices ,s teering,bias ing and coupling diodes for fas t s witching and low logic level applications
Mechanical Data
Cas e:JEDEC DO--35,glas s cas e Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram
1N5711
Small S.
- 1N5711 | MA-COM
- General Purpose Axial Lead Glass Packaged Schottky Diodes
- 1N5711, 1N5712, MADS-005711, MADS-005712
General Purpose Axial Lead Glass Packaged Schottky Diodes
.
- 1N5711, 1N5712, MADS-005711, MADS-005712
General Purpose Axial Lead Glass Packaged Schottky Diodes
Features
Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed Offered in Tape and Reel Packaging RoHS* Compliant
Glass Package Style
Description and Applications
These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels..
