1N5711 | CENPAK
Small Signal Schottky Barrier Diode
CENPAK ELECTRONICS
Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
Mechanical Data Case: DO-35 Glass Case Terminals: Plated ax.
- 1N5711 | Silicon Supplies
- Small-signal ultra-fast switching schottky diode
- 70V 15mA Schottky Diode – 1N5711
Small-si gnal ultra-fast switching schottky diode in bare die.
- 70V 15mA Schottky Diode – 1N5711
Small-si gnal ultra-fast switching schottky diode in bare die form
Rev 1.0 01/02/19
Features:
Picose cond switching speed
Low fo rward voltage drop 70V br eakdown voltage Guard-Ring for over-voltage protection
High reliability tested grades & matched
charac teristic options.
Orderin g Information
The following part suffixes apply: No suf fix - MIL-STD-750 /2073 Visual Inspection “H” .
- 1N5711 | Agilent
- Schottky Barrier Diodes
- Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Ser.
- Schottky Barrier Diodes for General Purpose Applications
Technical Data
1N5711 1N5712 5082-2300 Series 5082-2800 Series 5082-2900
Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA
• Pico Second Switching Speed
• High Breakdown Voltage Up to 70 V
• Matched Characteristics Available
Description/Applications
The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes which use a patented “guard ring” design to achieve a high .
- 1N5711 | Digitron Semiconductors
- SCHOTTKY RECTIFIERS
- 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCH.
- 1N5711, 1N5712 & 1N6263
High-reliability discrete products and engineering services since 1977
SCHOTTKY RECTIFIERS
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS Parameter
Peak Inverse Voltage
1N5711 1N6263
Power Dissipation (Infinite Heatsink)
Maximum Single.
- 1N5711 | LGE
- Small Signal Schottky Diodes
- Features
For general purpos e applications Metal s ilicon s chottky barrier device which is protecte.
- Features
For general purpos e applications Metal s ilicon s chottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fas t s witching m ake it ideal for protection of MOS devices ,s teering,bias ing and coupling diodes for fas t s witching and low logic level applications
Mechanical Data
Cas e:JEDEC DO--35,glas s cas e Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram
1N5711
Small S.
- 1N5711 | MA-COM
- General Purpose Axial Lead Glass Packaged Schottky Diodes
- 1N5711, 1N5712, MADS-005711, MADS-005712
General Purpose Axial Lead Glass Packaged Schottky Diodes
.
- 1N5711, 1N5712, MADS-005711, MADS-005712
General Purpose Axial Lead Glass Packaged Schottky Diodes
Features
Low Reverse Leakage Current Low Forward Voltage Drop Pico second Switching Speed Offered in Tape and Reel Packaging RoHS* Compliant
Glass Package Style
Description and Applications
These silicon diodes are packaged in a hermetic axial lead glass package. Various uses include detecting, mixing and switching at low power levels..
