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CENPAK ELECTRONICS
Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which
is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications.
Mechanical Data Case: DO-35 Glass Case Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026 Polarity: Colour band denotes cathode end Mounting Position: Any Weight: approx. 0.005 ounce, 0.14grams
1N5711 / 1N6263
Small Signal Schottky Barrier Diode Standard Glass Case JEDEC DO-35 Dimensions in inches and (mm)
0.020 (0.52) max
0.079 (2.0) max
1.0 (25.4) min
0.165 (4.2) max
1.0 (25.4) min
Absolute Maximum Ratings Tamb =25 OC unless otherwise specified
Parameter
Test Condition
Part
Repetitive peak revers voltage
1N5711 1N6263
Peak forward surge current Power dissipation
tp = 10 ms l = 4 mm, TL = constant
Symbol VRRM VRRM I.