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1N5711 Dataheets PDF



Part Number 1N5711
Manufacturers CENPAK
Logo CENPAK
Description Small Signal Schottky Barrier Diode
Datasheet 1N5711 Datasheet1N5711 Datasheet (PDF)

CENPAK ELECTRONICS Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Mechanical Data Case: DO-35 Glass Case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Colour band denotes cathode end Mountin.

  1N5711   1N5711



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CENPAK ELECTRONICS Features 1. For general purpose applications 2. Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make i t ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Mechanical Data Case: DO-35 Glass Case Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Colour band denotes cathode end Mounting Position: Any Weight: approx. 0.005 ounce, 0.14grams 1N5711 / 1N6263 Small Signal Schottky Barrier Diode Standard Glass Case JEDEC DO-35 Dimensions in inches and (mm) 0.020 (0.52) max 0.079 (2.0) max 1.0 (25.4) min 0.165 (4.2) max 1.0 (25.4) min Absolute Maximum Ratings Tamb =25 OC unless otherwise specified Parameter Test Condition Part Repetitive peak revers voltage 1N5711 1N6263 Peak forward surge current Power dissipation tp = 10 ms l = 4 mm, TL = constant Symbol VRRM VRRM I.


1N6263 1N5711 1N6263


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