Features
Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended...
Features
Metal-to-silicon junction High breakdown voltage Low turn-on voltage Ultrafast switching speed Prmarly intended for high level UHF/VHF detection and pulse applications with broad dynamic range
Mechanical Data
Case:JEDEC DO--35,glass case Polarity: Color band denotes cathode end Weight: Approx. 0.13 gram ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage Pow er dissipation (Infinite Heat Sink) Forw ard continuous current Junction and storage temperature range Maximumlead temperature for soldering during 10S at 4mmfromcase
1N5712
Small Signal
Schottky Diodes VOLTAGE RANGE: 20 V
POWER DISSIPATION: 430 mW
DO - 35(GLASS)
Dimensions in millimeters
Symbols
VRRM Ptot IFSM TJ/TSTG TL
Value
20.0 430.0 35.0 c-55 ---+ 150 230
UNITS V
mW mA
ELECTRICAL CHARACTERISTICS
Reverse breakdow n voltage @ IR=10 A
Leakage current
@ VR=16V
Forw ard voltage drop @ IF=1mA
Test pulse: tp 300 s <2% IF=35mA
Junction capacitance @ VR=0V,f=1MHz
Thermal resistance
Symbols
Min.
Typ.
Max. U...
