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1N6096 Dataheets PDF



Part Number 1N6096
Manufacturers GeneSiC
Logo GeneSiC
Description Silicon Power Schottky Diode
Datasheet 1N6096 Datasheet1N6096 Datasheet (PDF)

Silicon Power Schottky Diode Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage C.

  1N6096   1N6096


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Silicon Power Schottky Diode Features • High Surge Capability • Types from 30 V to 40V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N6095 thru 1N6096R VRRM = 30 V - 40 V IF = 25 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N6095 (R) 1N6096 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.3 ms 30 21 30 25 400 -55 to 150 -55 to 150 40 28 40 25 400 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N6095 (R) Diode forward voltage Reverse current Thermal characteristics Thermal resistance, junction case VF IF = .


1N6095 1N6096 1N6095R


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