Document
2N4220
thru
2N4222
2N4220,A
thru
2N4222,A
CASE 20-03, STYLE 3
TO-72 (TO-206AF)
JFET
LOW-FREQUENCY, LOW NOISE —N-CHANNEL DEPLETION
MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current
@Total Device Dissipation TA = 25°C
Derate above 25°C Junction Temperature Range Storage Channel Temperature Range
Symbol vDs vdg vgs
id
Pd
Tj Tstg
Value 30 30 -30
15 300
2 175
- 65 to + 200
Unit Vdc Vdc Vdc
mAdc
mW
., mW/°C
°C
°c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Typ Max Unit
OFF CHARACTERISTICS
Gate-Source Breakdown Voltage (Iq = -10 ftAdc, Vds = 0)
V (BR)GSS
-30
—
- Vdc
Gate Reverse Current
(VG S = -15 Vdc, VDS = 0) (Vqs = -15 Vdc, VDS = 0, TA = 150°C)
Gate Source Cutoff Voltage (ID = 0.1 nAdc, V Ds = 15 Vdc)
2N4220,A 2N4221.A 2N4222,A
'GSS v GS(off)
-
- -0.1
nAdc
-100
- Vdc -4 -6 -8
Gate Source Voltage
(Iq = 50 fiAdc, V D S = 15 Vdc) (ID = 200 fiAdc, Vds = 15 Vdc) (Iq = 500 /u.