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1N1199 Dataheets PDF



Part Number 1N1199
Manufacturers Digitron Semiconductors
Logo Digitron Semiconductors
Description SILICON POWER RECTIFIER
Datasheet 1N1199 Datasheet1N1199 Datasheet (PDF)

1N1199(A,B)-1N1206(A,B) High-reliability discrete products and engineering services since 1977 SILICON POWER RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Symbol Peak reverse voltage Operating & storage temperature range VR TJ, Tstg Maximum thermal resistance RθJC Mounting torque Wei.

  1N1199   1N1199



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1N1199(A,B)-1N1206(A,B) High-reliability discrete products and engineering services since 1977 SILICON POWER RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Parameter Symbol Peak reverse voltage Operating & storage temperature range VR TJ, Tstg Maximum thermal resistance RθJC Mounting torque Weight Add “R” to part numbers for reverse polarity. 1N1199 50V 1N1200 100V 1N1201 150V 1N1202 200V 1N1203 300V 1N1204 400V -65 to +200°C 2.5°C/W junction to case 25-30 inch pounds .16 ounces (5.0 grams) typical 1N1205 500V 1N1206 600V ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Value Average forward current IF(AV) 12 Amps Maximum surge current Maximum I2t for fusing IFSM 250 Amps I2t 260 A2s Maximum peak forward vol.


USD550 1N1199 1N1200


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