SILICON POWER RECTIFIER
1N1199(A,B)-1N1206(A,B)
High-reliability discrete products and engineering services since 1977
SILICON POWER RECTIFIER...
Description
1N1199(A,B)-1N1206(A,B)
High-reliability discrete products and engineering services since 1977
SILICON POWER RECTIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Parameter
Symbol
Peak reverse voltage Operating & storage temperature range
VR TJ, Tstg
Maximum thermal resistance
RθJC
Mounting torque
Weight
Add “R” to part numbers for reverse polarity.
1N1199 50V
1N1200 100V
1N1201 150V
1N1202 200V
1N1203 300V
1N1204 400V
-65 to +200°C
2.5°C/W junction to case 25-30 inch pounds
.16 ounces (5.0 grams) typical
1N1205 500V
1N1206 600V
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Average forward current
IF(AV) 12 Amps
Maximum surge current Maximum I2t for fusing
IFSM 250 Amps I2t 260 A2s
Maximum peak forward vol...
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