2N706,A,B
(2N706 JAN AVAILABLE) CASE 22, STYLE 1
TO-18 (TO-206AA)
SWITCHING TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rat...
2N706,A,B
(2N706 JAN AVAILABLE) CASE 22, STYLE 1
TO-18 (TO-206AA)
SWITCHING
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
2N706A,B
Collector-Emitter Voltage(l)
Collector-Base Voltage
Emitter-Base Voltage
2N706 2N706A 2N706B
Collector Current
2N706,A,B
Total Device Dissipation faT/\ = 25°C Derate above 25°C
Total Device Dissipation (a Tq = 25°C Derate above 25°C
Total Device Dissipation (a Tq = 100°C Derate above 100"C
Operating and Storage Junction Temperature Range
Symbol VCEO VCER VCBO v EBO
ic
PD
Pd
Pd
Value 15 20 25 3.0
5.0 5.0 50 0.3 2.0
1.0 6.67
0.5
Unit Vdc Volts Volts Volts
mA
Watt mW/°C Watts mW/°C Watt
TJ- Tstg
- 65 to + 200
°C
Refer to 2N2368 for graphs.
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient 2N706A,B
Symbol R 0JC R 0JA
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Collector-Emitter Breakd...