Document
Silicon Fast Recovery Diode
Features • High Surge Capability • Types up to 400 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N3879 thru 1N3883R
VRRM = 50 V - 400 V IF = 6 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3879 (R) 1N3880 (R) 1N3881 (R) 1N3882 (R) 1N3883 (R) Unit
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage
Continuous forward current
VRRM
VRMS VDC
IF
TC ≤ 100 °C
50 100 200 300 400 V
35 70 140 210 280 V 50 100 200 300 400 V
6 6 6 6 6A
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
90
90
90
90 90
Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
A
°C °C
Electrical characteristics, at Tj = 25 °C, unless.