BCW69

BCW69,70 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO v EBO THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ty\ = 25°C Derate above 25°C Symbol PD Storage Temperature 'stg *Thermal Resistance Junction to Ambient R 0JA Package mounted on 99.5% alumina 10 x 8 x 0.6 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (Jc = 2.0 mAdc, Is = 0) Collector-Emitter Breakdown Voltage (IC = 100 niAdc, V EB = 0) Emitter-Base Breakdown Voltage (IE = 10 /uAdc, lc = 0) Collector Cutoff Current (VCB = 20 Vdc, El = 0) (VCB = 20 Vdc, lg = 0, Ta = 100°C) ON CHARACTERISTICS DC Current Gain 0c = 2.0 mAdc, Vqe = 5.0 Vdc) Collector-Emitter Saturation Voltage Oc = 10 mAdc, Ib = 0.5 mAdc) Base-Emitter On Voltage PC = 2.0 mAdc, Vqe = 5.0 ...