DatasheetsPDF.com

SWITCHING TRANSISTOR. 2N3868 Datasheet

DatasheetsPDF.com

SWITCHING TRANSISTOR. 2N3868 Datasheet






2N3868 TRANSISTOR. Datasheet pdf. Equivalent




2N3868 TRANSISTOR. Datasheet pdf. Equivalent





Part

2N3868

Description

PNP SILICON POWER SWITCHING TRANSISTOR



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Pac kage Designed for High Speed, Medium C urrent Switching and High Frequency Amp lifier Applications ABSOLUTE MAXIMUM R ATINGS DESCRIPTION Collector Emitter Vo ltage Collector Base Voltage Emitter Ba se Voltage Collect.
Manufacture

CDIL

Datasheet
Download 2N3868 Datasheet


CDIL 2N3868

2N3868; or Current - Continuous Peak Base Curren t Power Dissipation at Tc=25ºC Derate Above 25ºC Power Dissipation at Ta=25 C Derate Above 25ºC Operating And Sto rage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC IB PD PD Tj, Tstg V ALUE 60 60 4.0 3.0 10 0.5 6.0 34.3 1.0 5.71 - 65 to +200 THERMAL CHARACTERIST ICS Junction to Case Junction to Ambien t in free air Rth (j-.


CDIL 2N3868

c) Rth (j-a) 29 175 ELECTRICAL CHARACT ERISTICS (Tc=25ºC unless specified oth erwise) DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Cut Off Current Collector Cut off Current DC Current Ga in SYMBOL VCEO VCBO .


CDIL 2N3868

.

Part

2N3868

Description

PNP SILICON POWER SWITCHING TRANSISTOR



Feature


Continental Device India Limited An ISO/ TS 16949, ISO 9001 and ISO 14001 Certif ied Company PNP SILICON POWER SWITCHING TRANSISTOR 2N3868 TO-39 Metal Can Pac kage Designed for High Speed, Medium C urrent Switching and High Frequency Amp lifier Applications ABSOLUTE MAXIMUM R ATINGS DESCRIPTION Collector Emitter Vo ltage Collector Base Voltage Emitter Ba se Voltage Collect.
Manufacture

CDIL

Datasheet
Download 2N3868 Datasheet




 2N3868
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON POWER SWITCHING TRANSISTOR
2N3868
TO-39
Metal Can Package
Designed for High Speed, Medium Current Switching and High Frequency Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Peak
Base Current
Power Dissipation at Tc=25ºC
Derate Above 25ºC
Power Dissipation at Ta=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCEO
VCBO
VEBO
IC
IB
PD
PD
Tj, Tstg
VALUE
60
60
4.0
3.0
10
0.5
6.0
34.3
1.0
5.71
- 65 to +200
THERMAL CHARACTERISTICS
Junction to Case
Junction to Ambient in free air
Rth (j-c)
Rth (j-a)
29
175
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Cut Off Current
Collector Cut off Current
DC Current Gain
SYMBOL
VCEO
VCBO
VEBO
ICEX
ICBO
*hFE
Collector Emitter Saturation Voltage
*VCE (sat)
Base Emitter Saturation Voltage
*VBE (sat)
TEST CONDITION
IC=1mA, IB=0
IC=100µA, IE=0
IE=100µA, IC=0
VCE=60V, VBE (off)=2V
VCB=60V, IE=0,Tc=150ºC
IC=500mA, VCE=1V
IC=1.5A, VCE=2V
IC=2.5A, VCE=3V
IC=3A, VCE=5V
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
IC=500mA, IB=50mA
IC=1.5A, IB=150mA
IC=2.5A, IB=250mA
MIN
60
60
4.0
35
30
20
20
0.9
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MAX
1.0
150
150
0.50
0.75
1.30
1.0
1.4
2.0
UNITS
V
V
V
A
A
A
W
mW/ ºC
W
mW/ ºC
ºC
ºC/W
ºC/W
UNITS
V
V
V
µA
µA
V
V
V
V
V
V
2N3868Rev031105E
Continental Device India Limited
Data Sheet
Page 1 of 4




 2N3868
PNP SILICON POWER SWITCHING TRANSISTOR
2N3868
TO-39
Metal Can Package
ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
SYMBOL
**fT
Cob
Cib
TEST CONDITION
IC=100mA,VCE=5V, f=20MHz
VCB=10V, IE=0, f=0.1MHz
VEB=3V, IC=0, f=0.1MHz
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
** fT = lhfel. ftest
2N3868Rev031105E
td VCC=30V, VBE(off)=0, IC=1.5A,
tr IB1=150mA
ts VCC=30V, IC=1.5A,
tf IB1=IB2=150mA
MIN
60
MAX
120
1000
35
65
325
75
UNITS
MHz
pF
pF
ns
ns
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 4




 2N3868
2N3868
TO-39
Metal Can Package
A
B
D
G
2
1
3
LH
J
TO-39 Metal Can Package
DIM MIN MAX
A 8.50 9.39
B 7.74 8.50
C 6.09 6.60
D 0.40 0.53
E — 0.88
F 2.41 2.66
G 4.82 5.33
H 0.71 0.86
J 0.73 1.02
K 12.70 —
L 42 DEG 48 DEG
32 1
PIN CONFIGURATION
1. EMITTER
2. BASE
3. COLLECTOR
Packing Detail
PACKAGE
STANDARD PACK
Details
Net Weight/Qty
TO-39
500 pcs/polybag 540 gm/500 pcs
INNER CARTON BOX
Size
Qty
3" x 7.5" x 7.5"
20K
OUTER CARTON BOX
Size
Qty
Gr Wt
17" x 15" x 13.5"
32K
40 kgs
Component Disposal Instructions
1. CDIL Semiconductor Devices are RoHS compliant, customers are requested to please
dispose as per prevailing Environmental Legislation of their Country.
2. In Europe, please dispose as per EU Directive 2002/96/EC on Waste Electrical and
Electronic Equipment (WEEE).
2N3868Rev031105E
Continental Device India Limited
Data Sheet
Page 3 of 4



Recommended third-party 2N3868 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)