2N3766 2N3767
SILICON NPN POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR...
2N3766 2N3767
SILICON
NPN POWER
TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3766 and 2N3767 are silicon
NPN power
transistors manufactured by the epitaxial base process designed for power amplifier and medium speed switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL VCBO VCEO VEBO IC IB PD TJ, Tstg JC
2N3766 80
2N3767 100
60 80
6.0
4.0
2.0
25
-65 to +200
7.0
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
ICEV
VCE=Rated VCEO, VEB=1.5V
ICEO
VCE=Rated VCEO
IEBO
VEB=6.0V
BVCEO
IC=100mA (2N3766)
60
BVCEO
IC=100mA (2N3767)
80
VCE(SAT) IC=500mA, IB=50mA
VCE(SAT) IC=1.0A, IB=100mA
VBE(ON)
VCE10V, IC=1.0A
hF...
