1N3889

Silicon Fast Recovery Diode Features High Surge Capability Types up to 400 V VRRM Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3889 thru 1N3893R VRRM = 50 V - 400 V IF = 12 A DO-4 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 100 °C 50 100 200 300 400 V 35 70 140 280 420 V 50 100 200 400 600 V 12 12 12 12 12 A Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms 90 90 90 90 90 Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 A °C °C Electrical characteristics, at Tj = 25 °C,...